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A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface.

Jonghak YuhYen-Lung Jason LiHeguang LiYoshihiro OyamaCynthia HsuPradeep AnantulaGwang Yeong Stanley JeongAnirudh AmarnathSiddhesh DarneSneha BhatiaTianyu TangAditya AryaNaman RastogiNaoki OokumaHiroyuki MizukoshiAlex YapDemin WangSteve KimYonggang WuMin PengJason LuTommy IpSeema MalhotraTaekeun HanMasatoshi OkumuraJiwen LiuJeongduk John SohnHardwell ChibvongodzeMuralikrishna BalagaAkihiro MatsudaChen ChenIndra K. VV. S. N. K. Chaitanya G.Venky RamachandraYosuke KatoRavi KumarHuijuan WangFarookh MoogatIn-Soo YoonKazushige KandaTakahiro ShimizuNoboru ShibataKosuke YanagidairaTakuyo KodamaRyo FukudaYasuhiro HirashimaMitsuhiro Abe
Published in: IEEE J. Solid State Circuits (2023)
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