A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μs.
Toshiyuki KouchiMami KakoiNoriyasu KumazakiAkio SugaharaAkihiro ImamotoYasufumi KajiyamaYuri TeradaSanad BushnaqNaoaki KanagawaTakuyo KodamaRyo FukudaHiromitsu KomaiNorichika AsaokaHidekazu OhnishiRyosuke IsomuraTakaya HandaKensuke YamamotoYuki IshizakiYoko DeguchiAtsushi OkuyamaJunichi SatoHiroki YabeCynthia HsuMasahiro YoshiharaPublished in: IEEE J. Solid State Circuits (2021)