Comparison of nano-scale complementary metal-oxide semiconductor and 3T-4T double gate fin-shaped field-effect transistors for robust and energy-efficient subthreshold logic.
Ramesh VaddiSudeb DasguptaR. P. AgarwalPublished in: IET Circuits Devices Syst. (2010)
Keyphrases
- energy efficient
- field effect transistors
- nano scale
- metal oxide semiconductor
- steady state
- wireless sensor networks
- high density
- sensor networks
- energy consumption
- mathematical analysis
- schottky barrier
- integrated circuit
- semiconductor devices
- low cost
- energy efficiency
- base station
- multi core architecture
- sensor nodes
- routing protocol
- data center
- databases