as gate dielectric.

Hongxia Liu Qianwei Kuang Suzhen Luan Aaron Zhao Sai Tallavarjula

Published in: Sci. China Inf. Sci. (2010)

Keyphrases

silicon dioxide
gate dielectrics
leakage current
electrical properties
nano scale
multiple input
high temperature
real time
artificial intelligence
transmission line
computational complexity
hidden markov models
low cost