Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics.
Slah HlaliNeila HizemLiviu MilitaruA. KalboussiAbdelkader SouifiPublished in: Microelectron. Reliab. (2017)
Keyphrases
- transmission line
- high speed
- silicon dioxide
- leakage current
- low voltage
- electrical properties
- gate insulator
- human machine interface
- power system
- mobile devices
- low power
- wide range
- unit length
- hands free
- user interface
- real time
- input device
- operating conditions
- magnetic field
- high frequency
- human computer interaction