Login / Signup
The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide.
Hong Wu
Weifeng Sun
Yangbo Yi
Haisong Li
Longxing Shi
Published in:
Microelectron. Reliab. (2008)
Keyphrases
</>
high voltage
silicon dioxide
leakage current
field effect transistors
low voltage
operating conditions
electrical properties
high temperature
partial discharge
high density
steady state
normal operation
power line
integrated circuit
high speed
data mining
mathematical analysis
fuel cell