Evaluation of Device Parameters of HfO2/SiO2/Si Gate Dielectric Stack for MOSFETs.
A. MadanS. C. BoseP. J. GeorgeChandra ShekharPublished in: VLSI Design (2005)
Keyphrases
- leakage current
- low voltage
- gate insulator
- electrical properties
- silicon dioxide
- power line
- design considerations
- data sets
- input parameters
- parameter values
- transfer function
- parameter estimation
- maximum likelihood
- evaluation methods
- evaluation criteria
- parameter settings
- data acquisition
- film thickness
- video sequences