Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory.
N. IshiharaY. ShimadaT. OchiS. SetoH. MatsuoH. YamashitaS. MoritaM. UkishimaK. UejimaY. ArayashikiS. KajiwaraA. MurayamaK. NishiyamaK. SugimaeS. MoriY. SaitoT. ShundoA. MaedaH. KamiyaY. UchiyamaM. FujiwaraF. AisoK. SekineN. OhtaniPublished in: VLSI Technology and Circuits (2023)
Keyphrases
- highly scalable
- ultra high
- flash memory
- metal oxide
- solid state
- garbage collection
- buffer management
- file system
- random access
- disk drives
- main memory
- embedded systems
- high resolution
- database systems
- data handling
- hand held devices
- data storage
- b tree
- storage systems
- storage devices
- multi layer
- small size
- chemical vapor deposition
- field effect transistors
- data management
- memory management
- low cost
- management system
- databases