A 2.5 GHz, 1-Kb SRAM with Auxiliary Circuit Assisted Sense Amplifier in 65-nm CMOS Process.
Rupesh D. KadhaoSiddharth R. K.Nithin Kumar Y. B.Vasantha M. H.Devesh DwivediPublished in: VLSID (2023)
Keyphrases
- power consumption
- clock gating
- cmos technology
- low power
- high speed
- power reduction
- high power
- leakage current
- random access memory
- knowledge base
- low voltage
- power dissipation
- nm technology
- power saving
- clock frequency
- high sensitivity
- image sensor
- frequency band
- parallel processing
- low cost
- logic circuits
- delay insensitive