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Analytical solution on interfacial reliability of 3-D through-silicon-via (TSV) containing dielectric liner.

Yingtao DingYangyang YanQianwen ChenShiwei WangRui SuHua Dang
Published in: Microelectron. Reliab. (2014)
Keyphrases
  • high density
  • high speed
  • mathematical model
  • silicon dioxide
  • gate dielectrics
  • closed form
  • data sets