An analog perspective on device reliability in 32nm high-κ metal gate technology.
Florian ChouardShailesh MoreMichael FuldeDoris Schmitt-LandsiedelPublished in: DDECS (2011)
Keyphrases
- metal oxide semiconductor
- field effect transistors
- gate insulator
- low cost
- cmos technology
- integrated circuit
- steady state
- nm technology
- high density
- high reliability
- mathematical analysis
- wide range
- low power
- silicon on insulator
- viewpoint
- cost effective
- remote control
- power consumption
- input device
- image sensor
- rapid development
- failure rate
- neural network
- nano scale
- information technology
- parallel processing
- metal oxide
- gate dielectrics
- information systems