Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology.
Hangning ShiAilun YiJiaxin DingXudong LiuQingcheng QinJuemin YiJunjie HuMiao WangDemin CaiJianfeng WangKe XuFengwen MuTadatomo SugaRené HellerMao WangShengqiang ZhouWenhui XuKai HuangTiangui YouXin OuPublished in: Sci. China Inf. Sci. (2023)