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Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology.

Hangning ShiAilun YiJiaxin DingXudong LiuQingcheng QinJuemin YiJunjie HuMiao WangDemin CaiJianfeng WangKe XuFengwen MuTadatomo SugaRené HellerMao WangShengqiang ZhouWenhui XuKai HuangTiangui YouXin Ou
Published in: Sci. China Inf. Sci. (2023)
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