Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices.
Seongjae ChoJang-Gn YunIl-Han ParkJung Hoon LeeJong Pil KimJong Duk LeeHyungcheol ShinByung-Gook ParkPublished in: IEICE Trans. Electron. (2007)