On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.

Mehak Ashraf Mir A. Thakare Mohammad Ateeb Munshi V. Avinash Saniya S. Wani Zubear Khan Rajarshi Roy Chaudhuri Simran R. Karthik Rasik Rashid Malik Vipin Joshi Mayank Shrivastava

Published in: IRPS (2024)

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