Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design.
Sudip GhoshBrice GrandchampG. A. KonéFrançois MarcCristell ManeuxThomas ZimmerVirginie NodjiadjimMuriel RietJean-Yves DupuyJean GodinPublished in: Microelectron. Reliab. (2011)