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Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films.

A-Ram ChoiSang-Sik ChoiByung-Guan ParkDongwoo SuhGyungock KimJin-Tae KimJin-Soo ChoiDeok Ho ChoTae-Hyun HanKyu-Hwan Shim
Published in: IEICE Trans. Electron. (2008)
Keyphrases
  • chemical vapor deposition
  • thin film
  • aspect ratio
  • electrical properties
  • multi layer
  • high density
  • bounding box
  • gate insulator
  • camera parameters
  • viewpoint
  • perspective projection