SRAM Circuit With Expanded Operating Margin and Reduced Stand-By Leakage Current Using Thin-BOX FD-SOI Transistors.
Masanao YamaokaRyuta TsuchiyaTakayuki KawaharaPublished in: IEEE J. Solid State Circuits (2006)
Keyphrases
- leakage current
- low voltage
- cmos technology
- silicon on insulator
- low power
- power consumption
- power line
- power management
- parallel processing
- circuit design
- power dissipation
- random access memory
- design considerations
- high speed
- image sensor
- silicon dioxide
- electrical properties
- support vector
- power reduction
- integrated circuit
- flip flops
- image processing algorithms
- real time
- micron cmos