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Analysis of the impact of interfacial oxide thickness variation on metal-gate high-K circuits.

Minki ChoKingsuk MaitraSaibal Mukhopadhyay
Published in: CICC (2008)
Keyphrases
  • field effect transistors
  • steady state
  • high density
  • mathematical analysis
  • high speed
  • metal oxide
  • gate insulator
  • grain size
  • chip design
  • real time
  • wide range
  • cross section
  • cmos technology
  • silicon dioxide