Eighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applications.
Khizar HayatSalahuddin ZafarTariq MehmoodBusra Cankaya AkogluEkmel ÖzbayAhsan KashifPublished in: IET Circuits Devices Syst. (2021)
Keyphrases
- multistage
- thin film
- high power
- high density
- high speed
- gate insulator
- room temperature
- low power
- dynamic programming
- power consumption
- production system
- single stage
- stochastic programming
- electron microscopy
- metal oxide semiconductor
- stochastic optimization
- silicon dioxide
- lot sizing
- high sensitivity
- optimal policy
- production line
- integrated circuit
- capacity expansion
- low cost
- multi layer
- reinforcement learning
- multistage stochastic
- field effect transistors
- interconnection networks
- power dissipation