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Oxide-Tunneling Leakage Suppressed SRAM for Sub-65-nm Very Large Scale Integrated Circuits.

Ji-Hye BongKwan-Hee JoKyeong-Sik MinSung-Mo Kang
Published in: J. Low Power Electron. (2011)
Keyphrases
  • leakage current
  • integrated circuit
  • low voltage
  • electrical properties
  • power line
  • silicon dioxide
  • scale space
  • image processing
  • electron beam
  • control system
  • high speed
  • infrared
  • metal oxide semiconductor