Login / Signup
Heterogeneously Integrated III-V Lasers Fabricated Using Epitaxial Growth on an InP/SiO2/Si Substrate.
Takuro Fujii
Koji Takeda
Hidetaka Nishi
Shinji Matsuo
Published in:
OFC (2018)
Keyphrases
</>
electrical properties
film thickness
metal oxide
thin film
high speed
chemical vapor deposition
leakage current
search engine
case study
artificial intelligence
x ray
growth model
gate dielectrics
databases
semiconductor devices
magnetic recording
growth rate
neural network