Dual-threshold-voltage configurable circuits with three-independent-gate silicon nanowire FETs.
Jian ZhangPierre-Emmanuel GaillardonGiovanni De MicheliPublished in: ISCAS (2013)
Keyphrases
- field effect transistors
- cmos technology
- silicon dioxide
- low voltage
- steady state
- high density
- low power
- high speed
- mathematical analysis
- semiconductor devices
- power consumption
- power dissipation
- liquid crystal
- neural network
- parallel processing
- low cost
- real time
- threshold selection
- adaptive threshold
- power system
- leakage current