A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management.
Yih WangUddalak BhattacharyaFatih HamzaogluPramod KolarYong-Gee NgLiqiong WeiYing ZhangKevin ZhangMark BohrPublished in: IEEE J. Solid State Circuits (2010)