Gate leakage current accurate models for nanoscale MOSFET transistors.

Abdoul Rjoub Nedal Al Taradeh Mamoun F. Al-Mistarihi

Published in: PATMOS (2014)

Keyphrases

accurate models
leakage current
low voltage
cmos technology
highly accurate
silicon dioxide
low power
electrical properties
high density
space charge
small samples
integrated circuit
power consumption
atomic force microscopy
power line
mechanical properties
circuit design
parallel processing
energy efficiency