Sign in

A Circuit Level Fault Model for Resistive Shorts of MOS Gate Oxide.

Xiang LuZhuo LiWangqi QiuD. M. H. WalkerWeiping Shi
Published in: MTV (2004)
Keyphrases
  • fault model
  • field effect transistors
  • safety analysis
  • low voltage
  • leakage current
  • cmos technology
  • high speed
  • multiple input
  • fault injection
  • silicon dioxide