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Trench insulated gate bipolar transistors submitted to high temperature bias stress.

Cheick Oumar MaïgaHamid ToutahBoubekeur Tala-IghilBertrand Boudart
Published in: Microelectron. Reliab. (2005)
Keyphrases
  • field effect transistors
  • high temperature
  • high density
  • steady state
  • mathematical analysis
  • markov chain
  • silicon dioxide
  • real time
  • variance reduction
  • data sets
  • sludge compost