Circuit design issues in multi-gate FET CMOS technologies.
Christian PachaKlaus von ArnimThomas SchulzWeize XiongMichael GostkowskiGerhard KnoblingerAndrew MarshallThomas NirschlJörg BertholdChristian RussHarald GossnerCharvaka DuvvuryPaul PatrunoC. Rinn CleavelinKlaus SchrueferPublished in: ISSCC (2006)
Keyphrases
- design issues
- cmos technology
- field effect transistors
- circuit design
- high speed
- chip design
- low power
- analog vlsi
- design decisions
- low voltage
- nm technology
- power dissipation
- delay insensitive
- power consumption
- low cost
- usability issues
- metal oxide semiconductor
- gate dielectrics
- multiple input
- parallel processing
- vlsi circuits
- steady state
- silicon on insulator
- digital circuits
- mathematical analysis
- high density
- design principles
- hardware software partitioning
- infrared
- database