A 0.31V Vmin Cryogenic SRAM in 14 nm FinFET for Quantum Computing.
Rajiv V. JoshiJohn TimmerwilkeKevin TienMark YeckSudipto ChakrabortyPublished in: VLSI Technology and Circuits (2022)
Keyphrases
- quantum computing
- leakage current
- dynamic random access memory
- quantum inspired
- cmos technology
- quantum evolutionary algorithm
- power consumption
- mobile computing
- low power
- quantum mechanics
- logic synthesis
- low voltage
- random access memory
- artificial intelligence
- silicon on insulator
- evolutionary algorithm
- electrical properties
- power reduction
- data collection
- databases