Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing.
Sang-Myeon HanMin-Cheol LeeMoon-Young ShinJoong-Hyun ParkMin-Koo HanPublished in: Proc. IEEE (2005)
Keyphrases
- high speed
- simulated annealing
- iterative closest point algorithm
- laser scanner
- range images
- point cloud
- iterative closest point
- thin film transistor
- database replication
- electron beam
- surface registration
- metal oxide
- matching algorithm
- image acquisition
- waveguide
- fiber optic
- laser radar
- high resolution
- evolutionary algorithm
- three dimensional
- tft lcd
- image processing