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Analog Synaptic Devices Based on IGZO Thin-Film Transistors with a Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure for High-Performance Neuromorphic Systems.

Dongseok KwonEun Chan ParkWonjun ShinRyun-Han KooJoon HwangJong-Ho BaeDaewoong KwonJong-Ho Lee
Published in: Adv. Intell. Syst. (2023)
Keyphrases
  • thin film
  • grain size
  • high density
  • field effect transistors
  • high temperature
  • floating gate
  • chemical vapor deposition
  • plasma etching
  • management system
  • space charge
  • mobile devices
  • expert systems
  • short circuit