Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology.
Géraldine BertrandChristelle DelageMarise BafleurNicolas NolhierJean-Marie DorkelQuang NguyenNicolas MauranDavid TrémouillesPhilippe PerduPublished in: IEEE J. Solid State Circuits (2001)