Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide FET Integrated With 65-nm Si CMOS.
Tatsuya OnukiWataru UesugiAtsuo IsobeYoshinori AndoSatoru OkamotoKiyoshi KatoTri Rung YewJ. Y. WuChi Chang ShuaiShao Hui WuJames MyersKlaus DopplerMasahiro FujitaShunpei YamazakiPublished in: IEEE J. Solid State Circuits (2017)
Keyphrases
- room temperature
- dynamic random access memory
- metal oxide
- cmos technology
- silicon on insulator
- thin film
- leakage current
- transmission electron microscopy
- nm technology
- low voltage
- high speed
- metal oxide semiconductor
- magnetic field
- power consumption
- low cost
- x ray
- low power
- memory requirements
- random access memory
- circuit design
- cortical surface