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Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress.

Cheick Oumar MaïgaHamid ToutahBoubekeur Tala-IghilBertrand Boudart
Published in: Microelectron. Reliab. (2004)
Keyphrases
  • field effect transistors
  • high temperature
  • high density
  • steady state
  • mathematical analysis
  • silicon dioxide
  • neural network
  • diesel engine
  • database
  • genetic algorithm
  • positive and negative