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Elimination of half select disturb in 8T-SRAM by local injected electron asymmetric pass gate transistor.
Kentaro Honda
Kousuke Miyaji
Shuhei Tanakamaru
Shinji Miyano
Ken Takeuchi
Published in:
CICC (2010)
Keyphrases
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leakage current
electrical properties
low voltage
low power
silicon dioxide
high speed
cmos technology
power line
genetic algorithm
feature selection
image sequences
design considerations
electric field
nm technology