Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor.
Yoko YoshimuraKensuke OtaMasumi SaitohPublished in: IRPS (2018)
Keyphrases
- leakage current
- silicon dioxide
- low voltage
- high speed
- image degradation
- electrical properties
- signal to noise ratio
- noise reduction
- random noise
- input data
- sensor noise
- additive noise
- median filter
- missing data
- field effect transistors
- power line
- low power
- neural network
- noise model
- image noise
- noisy environments
- noise free
- noisy data
- degraded images
- low snr
- noise level
- database replication