Login / Signup

A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets.

Yuanqing LiLixiang LiYuan MaLi ChenRui LiuHaibin WangQiong WuMichael NewtonMo Chen
Published in: J. Electron. Test. (2016)
Keyphrases
  • leakage current
  • high speed
  • event detection
  • low power
  • data structure
  • database
  • data sets
  • neural network
  • genetic algorithm
  • data streams
  • power consumption
  • dynamic random access memory