V. S. Pershenkov

Publication Activity (10 Years)

Years Active: 2001-2017
Publications (10 Years): 2

Top Topics

Processing Capabilities

Top Venues

Microelectron. Reliab.

Publications

V. S. Pershenkov, Aleksandr S. Petrov, Alexander S. Bakerenkov, Viktor N. Ulimov, V. A. Felytsyn, A. S. Rodin, V. V. Belyakov, V. A. Telets, V. V. Shurenkov
True dose rate physical mechanism of ELDRS effect in bipolar devices. Microelectron. Reliab. (2017)
V. S. Pershenkov, Alexander S. Bakerenkov, V. A. Felitsyn, A. S. Rodin, V. A. Telets, V. V. Belyakov
ELDRS in SiGe transistors for room and low-temperature irradiation. Microelectron. Reliab. 63 (2016)
V. S. Pershenkov, Miguel Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez
Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses. Microelectron. Reliab. 54 (11) (2014)
V. S. Pershenkov, A. D. Tremasov, V. V. Belyakov, A. U. Razvalyaev, V. S. Mochkin
X-ray ion mobility spectrometer. Microelectron. Reliab. 46 (2-4) (2006)
V. S. Pershenkov, S. V. Avdeev, A. S. Tsimbalov, M. N. Levin, V. V. Belyakov, D. V. Ivashin, A. Y. Slesarev, A. Y. Bashin, Gennady I. Zebrev, Viktor N. Ulimov
Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response. Microelectron. Reliab. 42 (4-5) (2002)
M. N. Levin, V. R. Gitlin, S. G. Kadmensky, S. S. Ostrouhov, V. S. Pershenkov
X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages. Microelectron. Reliab. 41 (2) (2001)