Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses.
V. S. PershenkovMiguel UllánM. WilderH. SpielerE. SpencerS. ResciaF. M. NewcomerF. Martinez-McKinneyW. KononenkoA. A. GrilloS. DíezPublished in: Microelectron. Reliab. (2014)