Login / Signup
V. N. Ramakrishnan
ORCID
Publication Activity (10 Years)
Years Active: 2012-2023
Publications (10 Years): 2
Top Topics
Parallel Processing
Topological Features
Autoregressive
Leakage Current
Top Venues
Microelectron. J.
Microelectron. Reliab.
IEEE Access
</>
Publications
</>
Nilesh Kumar Jaiswal
,
V. N. Ramakrishnan
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance.
IEEE Access
11 (2023)
S. Nilamani
,
P. Chitra
,
V. N. Ramakrishnan
Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance.
Microelectron. Reliab.
82 (2018)
P. Suveetha Dhanaselvam
,
N. B. Balamurugan
,
V. N. Ramakrishnan
A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs.
Microelectron. J.
44 (12) (2013)
V. N. Ramakrishnan
,
R. Srinivasan
Soft error study in double gated FinFET-based SRAM cells with simultaneous and independent driven gates.
Microelectron. J.
43 (11) (2012)