Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance.
S. NilamaniP. ChitraV. N. RamakrishnanPublished in: Microelectron. Reliab. (2018)
Keyphrases
- cmos technology
- leakage current
- low power
- low voltage
- power consumption
- parallel processing
- power dissipation
- x ray
- infrared
- high speed
- nm technology
- silicon on insulator
- low cost
- random access memory
- image sensor
- topological spaces
- topological properties
- embedded dram
- power reduction
- topological features
- power line
- spatial relations