Hongsik Jeong

Publication Activity (10 Years)

Years Active: 1999-2023
Publications (10 Years): 3

Top Topics

Magnetic Recording

Top Venues

Microelectron. Reliab.

Publications

Seongyeon Yu, Namwook Hur, Wansun Kim, Mann-Ho Cho, Hyunchul Sohn, Joonki Suh, Hongsik Jeong, Jong-Hyeok Yoon
A PRAM-based PIM Macro Using the Gilbert Multiplier-based Active Feedback and Input-aware SAR ADC. ISOCC (2023)
Hongsik Jeong
High density PCM(phase change memory) technology. ISOCC (2016)
Yongwoo Kwon, Byoungnam Park, Heesun Yang, Jin-Ha Hwang, Dae-Hwan Kang, Hongsik Jeong, Yunheub Song
Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells. Microelectron. Reliab. 63 (2016)
Dae-Hwan Kang, Hyun-Goo Jun, Kyung-Chang Ryoo, Hongsik Jeong, Hyunchul Sohn
Emulation of spike-timing dependent plasticity in nano-scale phase change memory. Neurocomputing 155 (2015)
KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Kwang-Suk Yu, Gitae Jeong, Hongsik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. ISSCC (2007)
Kinam Kim, Gitae Jeong, Hongsik Jeong, Sungyung Lee
Emerging memory technologies. CICC (2005)
Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi, Hyung-Rok Oh, Sangbeom Kang, Ki-Sung Kim, Kyung-Hee Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Youngnam Hwang, SuJin Ahn, Gwan-Hyeob Koh, Gitae Jeong, Hongsik Jeong, Kinam Kim
A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). IEEE J. Solid State Circuits 40 (1) (2005)
Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. IEEE J. Solid State Circuits 38 (11) (2003)
Hongil Yoon, Gi-Won Cha, Changsik Yoo, Nam-Jong Kim, Keum-Yong Kim, Chang Ho Lee, Kyu-Nam Lim, Kyuchan Lee, Jun-Young Jeon, Tae Sung Jung, Hongsik Jeong, Tae-Young Chung, Kinam Kim, Soo-In Cho
A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM. IEEE J. Solid State Circuits 34 (11) (1999)