A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM).
Woo Yeong ChoBeak-Hyung ChoByung-Gil ChoiHyung-Rok OhSangbeom KangKi-Sung KimKyung-Hee KimDu-Eung KimChoong-Keun KwakHyun-Geun ByunYoungnam HwangSuJin AhnGwan-Hyeob KohGitae JeongHongsik JeongKinam KimPublished in: IEEE J. Solid State Circuits (2005)
Keyphrases
- phase transition
- random access memory
- flash memory
- random access
- constraint satisfaction
- main memory
- parallel algorithm
- satisfiability problem
- design considerations
- np complete
- randomly generated
- hard problems
- random instances
- low voltage
- random constraint satisfaction problems
- np complete problems
- database systems
- file system
- sat problem
- shared memory
- memory management
- data storage
- embedded systems
- constraint satisfaction problems
- special case
- data model