Godofredo García Salgado

Publication Activity (10 Years)

Years Active: 2008-2023
Publications (10 Years): 5

Top Topics

Silicon Dioxide

Top Venues

Publications

Juan Carlos Pérez Trinidad, Marco Antonio Vasquez-Agustin, Godofredo García Salgado, Román Romano-Trujillo, Fernando Lopez-Marcos, Heber Vilchis, Enrique Rosendo Andrés, José Juan Gervacio Arciniega, Orlando Cortazar Martínez, Antonio Coyopol Solís
Effect of thermal annealing in H2 atmosphere of SiCxOy films obtained by HFCVD technique. CCE (2023)
Erick Gastellou, Rafael García, Ana M. Herrera, Antonio Ramos, Godofredo García Salgado, Mario Robles, Jorge A. Rodríguez, Yani D. Ramírez, Roberto C. Carrillo
Isotherm Theoretical Study of the AlxGa1-xAsySb1-y Quaternary Alloy Using the Regular Solution Approximation for Its Possible Growth via Liquid-Phase Epitaxy at Low Temperatures. Entropy 24 (12) (2022)
Gabriel Omar Mendoza Conde, José Alberto Luna López, Zaira Jocelyn Hernández Simón, José Álvaro David Hernández de la Luz, Godofredo García Salgado, Erick Gastellou Hernández, Haydee Patricia Martínez-Hernández, Javier Flores-Méndez
MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors. Sensors 22 (10) (2022)
María R. Jiménez-Vivanco, Godofredo García Salgado, Franciso Morales-Morales, Antonio Coyopol, Lizeth Martínez, Jocelyn Faubert, J. Eduardo Lugo
Tuning Wavelength of the Localized Mode Microcavity by Applying Different Oxygen Flows. TCCE (2021)
Francisco Ramírez-González, Godofredo García Salgado, Enrique Rosendo, Tomás Díaz, Fabiola Nieto-Caballero, Antonio Coyopol, Román Romano, Alberto Luna, Karim Monfil, Erick Gastellou
Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity. Sensors 20 (17) (2020)
Godofredo García Salgado, R. Hernández, Javier Martínez, Tomás Díaz, Héctor Juárez, Enrique Rosendo, Reina Galeazzi, A. García, G. Juárez
Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer. Microelectron. J. 39 (3-4) (2008)