Gil-Young Kang

Publication Activity (10 Years)

Years Active: 2020-2024
Publications (10 Years): 3

Top Topics

Historical Data

Camera Parameters

Top Venues

IEEE J. Solid State Circuits

Publications

Sung-Yong Cho, Moon-Chul Choi, Jaehyeok Baek, Donggun An, Sanghoon Kim, Daewoong Lee, Seongyeal Yang, Gil-Young Kang, Juseop Park, Kyungho Lee, Hwan-Chul Jung, Gun-hee Cho, ChanYong Lee, Hye-Ran Kim, Yong-Jae Shin, Hanna Park, Sangyong Lee, Jonghyuk Kim, Bokyeon Won, Jungil Mok, Kijin Kim, Unhak Lim, Hong-Jun Jin, YoungSeok Lee, Young-Tae Kim, Heonjoo Ha, Jinchan Ahn, Wonju Sung, Yoontaek Jang, Hoyoung Song, Hyodong Ban, TaeHoon Park, Tae-Young Oh, Changsik Yoo, SangJoon Hwang
13.6 A 16Gb 37Gb/s GDDR7 DRAM with PAM3-Optimized TRX Equalization and ZQ Calibration. ISSCC (2024)
Daewoong Lee, Jaehyeok Baek, Hye-Jung Kwon, Daehyun Kwon, Chulhee Cho, Sang-Hoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Joo Kim, Ho-Seok Seol, Juhwan Kim, Jung-Bum Shin, Gil-Young Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, TaeHoon Park, Chi-Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, SangJoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ. IEEE J. Solid State Circuits 58 (1) (2023)
Hyung-Joon Chi, Chang-Kyo Lee, Junghwan Park, Jin-Seok Heo, Jaehoon Jung, Dongkeon Lee, Dae-Hyun Kim, Dukha Park, Kihan Kim, Sang-Yun Kim, Jinsol Park, Hyunyoon Cho, Sukhyun Lim, YeonKyu Choi, Youngil Lim, Daesik Moon, Geuntae Park, Jin-Hun Jang, Kyungho Lee, Isak Hwang, Cheol Kim, Younghoon Son, Gil-Young Kang, Kiwon Park, Seungjun Lee, Su-Yeon Doo, Chang-Ho Shin, Byongwook Na, Ji-Suk Kwon, Kyung Ryun Kim, Hye-In Choi, Seouk-Kyu Choi, Soobong Chang, Wonil Bae, Hyuck-Joon Kwon, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process. ISSCC (2020)