F. M. Bufler

Publication Activity (10 Years)

Years Active: 1998-2022
Publications (10 Years): 3

Top Topics

Diffusion Model

Parameter Estimation

Simulation Study

Top Venues

VLSI Technology and Circuits

Publications

P. Schuddinck, F. M. Bufler, Yang Xiang, A. Farokhnejad, Gioele Mirabelli, A. Vandooren, Bilal Chehab, A. Gupta, C. Roda Neve, Geert Hellings, Julien Ryckaert
PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch. VLSI Technology and Circuits (2022)
F. M. Bufler, Kenichi Miyaguchi, Thomas Chiarella, N. Horiguchi, Anda Mocuta
On the ballistic ratio in 14nm-Node FinFETs. ESSDERC (2017)
A. Erlebach, K. H. Lee, F. M. Bufler
Empirical ballistic mobility model for drift-diffusion simulation. ESSDERC (2016)
F. M. Bufler, Andreas Schenk, Wolfgang Fichtner
Proof of a simple time-step propagation scheme for Monte Carlo simulation. Math. Comput. Simul. 62 (3-6) (2003)
F. M. Bufler, Andreas Schenk, Christoph Zechner, Natsuko Inada, Yoshinori Asahi, Wolfgang Fichtner
Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1µm n-MOSFET. VLSI Design 2002 (4) (2002)
F. M. Bufler, P. Douglas Yoder, Wolfgang Fichtner
Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs. VLSI Design 2001 (1) (2001)
F. M. Bufler, P. Graf, Bernd Meinerzhagen
High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models. VLSI Design 1998 (1) (1998)