Andreea Balteanu

Publication Activity (10 Years)

Years Active: 2012-2016
Publications (10 Years): 1

Top Topics

Silicon On Insulator

Phase Modulation

Tensor Analysis

Top Venues

IEEE J. Solid State Circuits

Publications

Stefan Shopov, Andreea Balteanu, Jürgen Hasch, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu
A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output. IEEE J. Solid State Circuits 51 (9) (2016)
Jean-Olivier Plouchart, Fa Wang, Xin Li, Benjamin D. Parker, Mihai A. T. Sanduleanu, Andreea Balteanu, Bodhisatwa Sadhu, Alberto Valdes-Garcia, Daniel J. Friedman
Adaptive Circuit Design Methodology and Test Applied to Millimeter-Wave Circuits. IEEE Des. Test 31 (6) (2014)
Andreea Balteanu, Stefan Shopov, Sorin P. Voinigescu
A High Modulation Bandwidth, 110 GHz Power-DAC Cell for IQ Transmitter Arrays With Direct Amplitude and Phase Modulation. IEEE J. Solid State Circuits 49 (10) (2014)
Stefan Shopov, Andreea Balteanu, Sorin P. Voinigescu
A 19 dBm, 15 Gbaud, 9 bit SOI CMOS Power-DAC Cell for High-Order QAM W-Band Transmitters. IEEE J. Solid State Circuits 49 (7) (2014)
Andreea Balteanu, Ioannis Sarkas, Eric Dacquay, Alexander Tomkins, Gabriel M. Rebeiz, Peter M. Asbeck, Sorin P. Voinigescu
A 2-Bit, 24 dBm, Millimeter-Wave SOI CMOS Power-DAC Cell for Watt-Level High-Efficiency, Fully Digital m-ary QAM Transmitters. IEEE J. Solid State Circuits 48 (5) (2013)
Stefan Shopov, Andreea Balteanu, Sorin P. Voinigescu
A 19-dBm, 15-Gbaud, 9-bit SOI CMOS power-DAC cell for high-order QAM W-band transmitters. ESSCIRC (2013)
Ioannis Sarkas, Andreea Balteanu, Eric Dacquay, Alexander Tomkins, Sorin P. Voinigescu
A 45nm SOI CMOS Class-D mm-Wave PA with >10Vpp differential swing. ISSCC (2012)