A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output.
Stefan ShopovAndreea BalteanuJürgen HaschPascal ChevalierAndreia CathelinSorin P. VoinigescuPublished in: IEEE J. Solid State Circuits (2016)