Gate Drive Circuit Suitable for a GaN Gate Injection Transistor.
Fumiya HattoriYuta YanagisawaJun ImaokaMasayoshi YamamotoPublished in: IEEE Access (2023)
Keyphrases
- field effect transistors
- cmos technology
- high speed
- low power
- leakage current
- silicon dioxide
- multiple input
- metal oxide semiconductor
- steady state
- nano scale
- nm technology
- high density
- low voltage
- power dissipation
- mathematical analysis
- low cost
- information systems
- real world
- integrated circuit
- power consumption
- fault diagnosis
- multiscale