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2×VDD IO buffer with 1×VDD devices considering hot-carrier and gate-oxide reliability issues.

Dharmaray NedalgiSaroja V. SiddamalS. S. Kerur
Published in: Integr. (2024)
Keyphrases
  • silicon dioxide
  • mobile devices
  • database
  • reliability analysis
  • field effect transistors
  • leakage current
  • data sets
  • genetic algorithm
  • learning algorithm
  • virtual memory