A read-static-noise-margin-free SRAM cell for low-VDD and high-speed applications.
Koichi TakedaYasuhiko HagiharaYoshiharu AimotoMasahiro NomuraYoetsu NakazawaToshio IshiiHiroyuki KobatakePublished in: IEEE J. Solid State Circuits (2006)
Keyphrases
- high speed
- low power
- high noise
- low signal to noise ratio
- power consumption
- support vector
- noisy data
- noise level
- random noise
- frame rate
- noise reduction
- signal to noise ratio
- high speed networks
- data transmission
- additive noise
- missing data
- noise sensitivity
- immune response
- signal noise ratio
- noisy environments
- image noise
- noise model
- maximum margin
- high levels
- gaussian noise
- data acquisition
- power system